(PDF) SIGC57T120R3L Datasheet

Número de pieza	SIGC57T120R3L
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com IGBT3 Chip SIGC57T120R3L FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module Applications: • drives C G E Chip Type VCE ICn Die Size SIGC57T120R3L 1200V 50A 7.6 x 7.53 mm2 Package Ordering Code sawn on foil Q67050- A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 7.6 x 7.53 mm 6.08 x 6.05 1.14 x 1.14 57.2 / 42.8 mm2 120 µm 150 mm 90 grd 246 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L7661B, Edition 2, 04.09.03 1 page

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PDF SIGC57T120R3L Data sheet ( Hoja de datos )