(PDF) SIGC28T60 Datasheet

Número de pieza	SIGC28T60
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com IGBT3 Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling SIGC28T60 This chip is used for: • power module • discrete components Applications: • drives C G E Chip Type SIGC28T60 VCE ICn Die Size 600V 50A 6.57 x 4.2 mm2 Package Ordering Code sawn on foil Q67050- A4337-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 6.57 x 4.2 2.166 x 3.401 2.432 x 3.401 0.817 x 1.52 27.6 / 20 mm2 mm2 70 µm 150 mm 90 deg 457 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD CLS, L7561A, Edition 2, 27.01.2005 1 page

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PDF SIGC28T60 Data sheet ( Hoja de datos )