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Número de pieza | SIGC158T170R3 | |
Descripción | IGBT Chip | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SIGC158T170R3 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Preliminary
IGBT3 Chip
SIGC158T170R3
FEATURES:
• 1700V Trench + Field Stop technology
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
Applications:
• drives
C
G
E
Chip Type
SIGC158T170R3
VCE
ICn
Die Size
Package Ordering Code
1700V 125A 12.57 x 12.57 mm2 sawn on foil
Q67050-
A4227-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metalization
Collector metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
12.57 x 12.57
4 x ( 5.05 x 2.32 )
4 x ( 5.05 x 2.54 )
1.12 x 1.12
158 / 124.8
mm
mm2
190 µm
150 mm
90 grd
86 pcs
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7801A, Edition 1, 02.06.2003 8:30
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SIGC158T170R3.PDF ] |
Número de pieza | Descripción | Fabricantes |
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