(PDF) SIGC156T120R2CQ Datasheet

Número de pieza	SIGC156T120R2CQ
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com SIGC156T120R2CQ IGBT Chip in Fieldstop-technology FEATURES: • 1200V Fieldstop technology 120µm chip This chip is used for: C • low turn-off losses • IGBT Modules • short tail current • positive temperature coefficient • integrated gate resistor Applications: G • SMPS, resonant applications E Chip Type VCE ICn Die Size Package Ordering Code SIGC156T120R2CQ 1200V 100A 12.59 X 12.59 mm2 sawn on foil SP0000-83655 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.59 X 12.59 mm2 8 x (3.98 x 2.38) 1.46 x 0.8 158.5 / 132.6 120 µm 150 mm 90 grd 82 pcs Photoimide 3200 nm Al Si Cu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L7181Q, 02.06.2005, Edition 1.0 1 page

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