(PDF) SIGC12T60NC Datasheet

Número de pieza	SIGC12T60NC
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Preliminary SIGC12T60NC This chip is used for: • IGBT Modules Applications: • drives C G E Chip Type SIGC12T60NC VCE ICn Die Size 600V 10A 3.5 x 3.5 mm2 Package Ordering Code sawn on foil Q67041-A4688- A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.5 x 3.5 mm2 12.25 / 8.7 1.989 x 1.583 1.1 x 0.694 100 µm 150 mm 0 deg 1219 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7222-M, Edition 2, 20.03.2003 1 page

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PDF SIGC12T60NC Data sheet ( Hoja de datos )