(PDF) SIGC06T120CS Datasheet

Número de pieza	SIGC06T120CS
Descripción	IGBT Chip
Fabricantes	Infineon Technologies
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No Preview Available ! www.DataSheet4U.com IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling SIGC06T120CS This chip is used for: • SGP02N120 Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC06T120CS VCE ICn 1200V 2A Die Size 2.45 x 2.25 mm2 Package Ordering Code sawn on foil Q67050-A4115- A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.45 x 2.25 mm2 5.512 / 2.5 1.03x1.29 0.42x0.56 180 µm 150 mm 0 deg 2794 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003 1 page

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PDF SIGC06T120CS Data sheet ( Hoja de datos )