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GP2S700HCPのメーカーはSharp Electrionicです、この部品の機能は「Compact Refl ective Photointerrupter」です。 |
部品番号 | GP2S700HCP |
| |
部品説明 | Compact Refl ective Photointerrupter | ||
メーカ | Sharp Electrionic | ||
ロゴ | |||
このページの下部にプレビューとGP2S700HCPダウンロード(pdfファイル)リンクがあります。 Total 13 pages
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GP2S700HCP
GP2S700HCP
SMT, Detecting Distance : 3mm
Phototransistor Output,
Compact Reflective
Photointerrupter
■ Description
GP2S700HCP is a compact-package, phototransistor
output, reflective photointerrupter, with emitter and
detector facing the same direction in a molding that
provides non-contact sensing. The compact package
series is a result of unique technology, combing transfer
and injection molding, that also blocks visible light to
minimize false detection.
This device has a long focal distance for this family of
devices and has a leadless (T&R) package, suitable for
reflow soldering.
■ Agency approvals/Compliance
1. Compliant with RoHS directive
■ Applications
1. Detection of object presence or motion.
2. Example : printer, optical storage
■ Features
1. Reflective with Phototransistor Output
2. Highlights :
• Compact Size
• Surface Mount Type (SMT), reflow soldering
• Tape and Reel (T&R) 1 000 pcs per reel
3. Key Parameters :
• Optimal Sensing Distance : 3mm
• Package : 4×3×2mm
• Visible light cut resin to prevent
4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Sheet No.: D3-A02201EN
1 Date Oct. 3. 2005
© SHARP Corporation
1 Page ■ Absolute Maximum Ratings
Parameter
Forward current
Input Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗1Soldering temperature
∗1 For 5s or less
Symbol
IF
VR
PD
VCEO
VECO
IC
PC
Ptot
Topr
Tstg
Tsol
(Ta=25˚C)
Rating
Unit
50 mA
6V
75 mW
35 V
6V
20 mA
75 mW
100 mW
−25 to +85 ˚C
−40 to +100 ˚C
260 ˚C
GP2S700HCP
■ Electro-optical Characteristics
Parameter
Symbol
Input
Forward voltage
Reverse current
VF
IR
Output
Transfer
charac-
teristics
Collector dark current
∗2 Collector current
∗3 Leak current
Response time
Rise time
Fall time
ICEO
IC
ILEAK
tr
tf
∗2 The condition and arrangement of the reflective object are shown below.
∗3 Without reflective object.
Condition
IF=20mA
VR=6V
VCE=20V
IF=4mA, VCE=2V
IF=4mA, VCE=2V
VCE=2V, IC=100μA,
RL=1kΩ, d=4mm
● Test Condition and Arrangement for Collector Current
Aluminum evaporation
Glass plate
d=4mm
MIN.
−
−
−
60
−
−
−
TYP.
1.2
−
1
−
−
20
20
(Ta=25˚C)
MAX. Unit
1.4 V
10 μA
100 nA
410 μA
700 nA
100
100
μs
Sheet No.: D3-A02201EN
3
3Pages GP2S700HCP
■ Design Considerations
● Design guide
1) Regarding to prevation of malfunction
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face
to the external light. Also, if some other electronic components are located close to this device, false
operation may occur.
(The light reflection caused by the other components may slip into the photodetecting portion of the
device and if may cause false operation.)
2) Distance characteristic
The distance between the photointerrupter and the object to be detected shall be determined the distance
by referencing Fig.8 "Relative collector current vs. distance".
3) For wiring on a mounting PCB
To avoid possibility for short, please do not apply pattern wiring on the back side of the device.
4) Regarding to mounting this product
There is a possibility that the opaque molded resin portion may have a crack by force at mounting etc.
Please use this product after well confirmation of conditions in your production line.
And please confirm the mounting workability beforehand when using the automatic mounting machine.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Light detector (qty. : 1)
Category
Material
Phototransister
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
20
• Light emitter (qty. : 1)
Category
Infrared light emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black epoxy resin
PCB
Glass epoxy resin
Maximum light emitting
wavelength (nm)
950
Lead frame plating
Au plating
I/O Frequency (MHz)
0.3
Sheet No.: D3-A02201EN
6
6 Page | |||
ページ | 合計 : 13 ページ | ||
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部品番号 | 部品説明 | メーカ |
GP2S700HCP | Compact Refl ective Photointerrupter | Sharp Electrionic |