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GP1S096HCZ0F
GP1S096HCZ0F
Gap : 1mm, Slit : 0.3mm
Phototransistor Output,
Compact Transmissive
Photointerrupter
■ Description
GP1S096HCZ0F is a compact-package, phototran-
sistor output, transmissive photointerrupter, with op-
posing emitter and detector in a molding that provides
non-contact sensing. The compact package series is a
result of unique technology combing transfer and injec-
tion molding.
This device has a low profile.
■ Agency approvals/Compliance
1. Compliant with RoHS directive
■ Applications
1. Detection of object presence or motion.
2. Example : printer, lens control for camera
■ Features
1. Transmissive with phototransistor output
2. Highlights :
• Compact Size
• Narrow Gap
3. Key Parameters :
• Gap Width : 1mm
• Slit Width (detector side): 0.3mm
• Package : 3.5×2.6×2.9mm
4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Sheet No.: D3-A00901EN
1 Date Jun. 30. 2005
© SHARP Corporation
■ Absolute Maximum Ratings
Parameter
Forward current
Input Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗1Soldering temperature
∗1 For 5s or less
Symbol
IF
VR
P
VCEO
VECO
IC
PC
Ptot
Topr
Tstg
Tsol
(Ta=25˚C )
Rating
Unit
50 mA
6V
75 mW
35 V
6V
20 mA
75 mW
100 mW
−25 to +85 ˚C
−40 to +100 ˚C
260 ˚C
GP1S096HCZ0F
1mm or more
Soldering area
■ Electro-optical Characteristics
Parameter
Input
Forward voltage
Reverse current
Output Collector dark current
Transfer Collector current
charac-
teristics
Collector-emitter saturation voltage
Response time
Rise time
Fall time
Symbol
VF
IR
ICEO
IC
VCE(sat)
tr
tf
Condition
IF=20mA
VR=3V
VCE=20V
VCE=5V, IF=5mA
IF=10mA, IC=40μA
VCE=5V, IC=100μA, RL=1kΩ
MIN.
−
−
−
100
−
−
−
TYP.
1.2
−
−
−
−
50
50
(Ta=25˚C )
MAX. Unit
1.4 V
10 μA
100 nA
400 μA
0.4 V
150 μs
150 μs
Sheet No.: D3-A00901EN
3
GP1S096HCZ0F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 1.6mm or more from the top of elements.
(Example)
1.6mm or more
1.6mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransistor
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
930
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
20
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black polyphernylene
sulfide resin (UL94 V-0)
Lead frame
42Alloy
Maximum light emitting
wavelength (nm)
950
Lead frame plating
SnCu plating
I/O Frequency (MHz)
0.3
Sheet No.: D3-A00901EN
6
