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GJSD1804 の電気的特性と機能

GJSD1804のメーカーはGTMです、この部品の機能は「NPN EPITAXIAL PLANAR SILICON TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 GJSD1804
部品説明 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
メーカ GTM
ロゴ GTM ロゴ 




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GJSD1804 Datasheet, GJSD1804 PDF,ピン配置, 機能
www.DataSheet4U.com
ISSUED DATE :2003/10/22
REVISED DATE :2005/01/13B
GJSD1804
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GJSD1804 applies to relay drivers, high-speed inverters, converters, and other general high-current
switching applications.
Features
*Low collector-to-emitter saturation voltage
*High current and high fT
*Excellent linearity of hFE
*Fast switching time
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Junction Temperature
Tj
+150
Storage Temperature
Tstg -55 ~ +150
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current(DC)
IC
8
Collector Current(Pulse)
IC
12
Collector Dissipation
PD
Tc=25
1
20
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
60 -
V(BR)CEO
50 -
V(BR)EBO
6-
ICBO
--
IEBO
--
VCE(sat)
- 0.2
VBE(sat)
- 0.95
hFE1
70 -
hFE2
35 -
fT - 180
tstg - 500
tf - 20
Cob - 65
unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=10uA, IE=0
- V IC=1mA, RBE=
- V IE=10uA, IC=0
1 uA VCB=40V, IE=0
1 uA VEB=4V, IC=0
0.4 V IC=4A, IB=0.2A
1.3 V IC=4A, IB=0.2A
400 VCE=2V, IC=0.5A
- VCE=2V, IC=6A
-
MHZ
VCE=5V,IC=1A
- ns See test circuit
- ns See test circuit
- pF VCB=10V, f=1MHz
GJSD1804
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GJSD1804 pdf, ピン配列
ISSUED DATE :2003/10/22
REVISED DATE :2005/01/13B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJSD1804
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共有リンク

Link :


部品番号部品説明メーカ
GJSD1802

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

GTM
GTM
GJSD1803

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

GTM
GTM
GJSD1804

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

GTM
GTM


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