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PDF GJSD1803 Data sheet ( Hoja de datos )
| Número de pieza | GJSD1803 | |
| Descripción | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2003/10/22
REVISED DATE :2005/01/13B
GJSD1803
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GJSD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current
switching applications.
Features
*Low collector-to-emitter saturation voltage.
*High current and high fT
*Excellent linearity of hFE
*Fast switching time
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Junction Temperature
Tj
+150
Storage Temperature
Tstg -55 ~ +150
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current(DC)
IC
5
Collector Current(Pulse)
ICP
8
Collector Dissipation
PD
Tc=25
1
20
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
60 -
V(BR)CEO
50 -
V(BR)EBO
6-
ICBO
--
IEBO
--
VCE(sat)
- 0.22
VBE(sat)
- 0.95
hFE1
70 -
hFE2
35 -
fT - 180
ton - 50
tstg - 500
tf - 20
Cob - 40
unless otherwise specified)
Max.
Unit
- V IC=10uA, IE=0
- V IC=1mA, RBE=
- V IE=10uA, IC=0
1 uA VCB=40V, IE=0
1 uA VEB=4V, IC=0
0.4 V IC=3A, IB=0.15A
1.3 V IC=3A, IB=0.15A
400 VCE=2V, IC=0.5A
- VCE=2V, IC=4A
-
MHZ
VCE=5V,IC=1A
- ns See test circuit
- ns See test circuit
- ns See test circuit
- pF VCB=10V, f=1MHz
Test Conditions
GJSD1803
Page: 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet GJSD1803.PDF ] | |
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