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GJSD1802のメーカーはGTMです、この部品の機能は「NPN EPITAXIAL PLANAR SILICON TRANSISTOR」です。 |
部品番号 | GJSD1802 |
| |
部品説明 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | ||
メーカ | GTM | ||
ロゴ | |||
このページの下部にプレビューとGJSD1802ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
www.DataSheet4U.com
ISSUED DATE :2003/10/22
REVISED DATE :2005/01/13B
GJSD1802
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.
Features
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Junction Temperature
Tj
+150
Storage Temperature
Tstg -55 ~ +150
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current(DC)
IC
3
Collector Current(Pulse)
ICP
6
Collector Dissipation
PD
Tc=25
1
20
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
60 -
V(BR)CEO
50 -
V(BR)EBO
6-
ICBO
--
IEBO
--
VCE(sat)
- 0.19
VBE(sat)
- 0.94
hFE1
100 -
hFE2
35 -
fT - 150
ton - 70
tstg - 650
tf - 35
Cob - 25
unless otherwise specified)
Max.
Unit
- V IC=10uA, IE=0
- V IC=1mA, RBE=
- V IE=10uA, IC=0
1 A VCB=40V, IE=0
1 A VEB=4V, IC=0
0.5 V IC=2A, IB=0.1A
1.2 V IC=2A, IB=0.1A
560 VCE=2V, IC=0.1A
- VCE=2V, IC=3A
-
MHZ
VCE=10V,IC=50mA
- ns See test circuit
- ns See test circuit
- ns See test circuit
- pF VCB=10V, f=1MHz
Test Conditions
GJSD1802
Page: 1/3
1 Page ISSUED DATE :2003/10/22
REVISED DATE :2005/01/13B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJSD1802
Page: 3/3
3Pages | |||
ページ | 合計 : 3 ページ | ||
|
PDF ダウンロード | [ GJSD1802 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GJSD1802 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | GTM |
GJSD1803 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | GTM |
GJSD1804 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR | GTM |