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GJ882のメーカーはGTMです、この部品の機能は「NPN EPITAXIAL PLANAR TRANSISTOR」です。 |
部品番号 | GJ882 |
| |
部品説明 | NPN EPITAXIAL PLANAR TRANSISTOR | ||
メーカ | GTM | ||
ロゴ | |||
このページの下部にプレビューとGJ882ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
www.DataSheet4U.com
ISSUED DATE :2002/12/13
REVISED DATE :2005/08/10B
GJ882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ882 is designed for using in output stage of 20W amplifier, voltage regulator, DC-DC converter and
relay driver.
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation(TC=25 )
PD
Electrical Characteristics (Ta = 25 )
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
Min. Typ. Max.
40 -
-
30 -
-
5- -
- -1
- -1
- - 0.5
*VBE(sat)
- 12
*hFE1
*hFE2
fT
Cob
30 -
-
100 - 500
- 90 -
- 45 -
Unit
V
V
V
uA
uA
V
V
MHz
pF
Classification Of hFE2
Rank
Q
Range
100 - 200
P
160 - 320
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55~+150
40
30
5
3
7
0.6
10
Unit
V
V
V
A
A
A
W
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
E
250 - 500
GJ882
Page: 1/3
1 Page ISSUED DATE :2002/12/13
REVISED DATE :2005/08/10B
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ882
Page: 3/3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ GJ882 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
GJ882 | NPN EPITAXIAL PLANAR TRANSISTOR | GTM |
GJ88L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
GJ88LS02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |