GI80LS02 Datasheet PDF - GTM
| Part Number | GI80LS02 | |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Manufacturers | GTM | |
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ISSUED DATE :2006/02/15
REVISED DATE :
GI80LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
25V
8m
75A
Description
The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Features
*Low On-resistance
*Simple Drive Requirement
*Fast Switching Speed
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
25
±20
75
52
250
96
0.75
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
1.4
110
Unit
/W
/W
GI80LS02
Page: 1/4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GI80LS02 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GI80LS02.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| GI80LS02 | The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTM | |
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