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VNS3NV04D-E の電気的特性と機能

VNS3NV04D-EのメーカーはSTMicroelectronicsです、この部品の機能は「fully autoprotected Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 VNS3NV04D-E
部品説明 fully autoprotected Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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VNS3NV04D-E Datasheet, VNS3NV04D-E PDF,ピン配置, 機能
VNS3NV04D-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Max On-State resistance (per ch.) RON 120m
Current limitation (typ)
)Drain-Source clamp voltage
ILIMH
VCLAMP
3.5A
40V
uct(sLinear current limitation
rodThermal shut down
PShort circuit protection
teIntegrated clamp
leLow current drawn from input pin
soDiagnostic feedback through input pin
bEsd protection
- ODirect access to the gate of the power mosfet
)(analog driving)
roduct(sCompatible with standard power mosfet
SO-8
Description
The VNS3NV04D-E is a device formed by two
monolithic OMNIFET II chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
Technology: they are intended for replacement of
standard Power MOSFETS from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Obsolete PTable 1. Device summary
Package
Tube
Tape and Reel
SO-8
VNS3NV04D-E
VNS3NV04DTR-E
September 2013
Rev 3
1/21
www.st.com
21

1 Page





VNS3NV04D-E pdf, ピン配列
VNS3NV04D-E
List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 4. Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 6. Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 7. Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 8. Source Drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 9
Obsolete Product(s) - Obsolete Product(s)Table 10. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3/21


3Pages


VNS3NV04D-E 電子部品, 半導体
Electrical specifications
2 Electrical specifications
Figure 3. Current and voltage conventions
VNS3NV04D-E
IIN1 RIN1
ID1
VIN1
IIN2 RIN2
INPUT 1
INPUT 2
DRAIN 1
DRAIN 2
ID2 VDS1
VIN2
SOURCE 1
SOURCE 2
VDS1
Obsolete Product(s) - Obsolete Product(s)2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2. Absolute maximum ratings
Symbol
Parameter
VDSn
VINn
IINn
RIN MINn
IDn
Drain-Source Voltage (VINn=0V)
Input voltage
Input current
Minimum input series impedance
Drain current
Value
Internally clamped
Internally clamped
+/-20
220
Internally limited
Unit
V
V
mA
A
IRn Reverse DC output current
-5.5 A
VESD1 Electrostatic discharge (R=1.5K, C=100pF)
4000
V
VESD2
Electrostatic discharge on output pins only (R=330,
C=150pF)
16500
V
Ptot Total dissipation at Tc=25°C
Tj Operating junction temperature
Tc Case operating temperature
Tstg Storage temperature
4
Internally limited
Internally limited
-55 to 150
°C
°C
°C
6/21

6 Page



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部品番号部品説明メーカ
VNS3NV04D-E

fully autoprotected Power MOSFET

STMicroelectronics
STMicroelectronics


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