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PDF SPD28N03L Data sheet ( Hoja de datos )
| Número de pieza | SPD28N03L | |
| Descripción | SIPMOS Power Transistor | |
| Fabricantes | Siemens Semiconductor | |
| Logotipo |  |
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SPD28N03L
SIPMOS® Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• Logic Level
• dv/dt rated
• 175°C operating temperature
VDS
RDS(on)
ID
30
0.018
30
V
Ω
A
Type
SPD28N03L
SPU28N03L
Package Ordering Code Packaging
P-TO252 Q67040-S4139-A2 Tape and Reel
P-TO251-3-1 Q67040-S4142-A2 Tube
Pin 1 Pin 2 Pin 3
GDS
www.DataSheet4U.com Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 30 A, VDS = 24 V, di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Semiconductor Group
1
Value
30
28
112
145
7.5
6
±20
75
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
1 page  
Power Dissipation
Ptot = f (TC)
SPD28N03L
80
W
Drain current
ID = f (TC)
parameter: VGS ≥ 10 V
SPD28N03L
32
A
SPD28N03L
60 24
50 20
40 16
30 12
20 8
10 4
0
0
20 40 60 80 100 120 140 160 °C 190
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 °C
10 3 SPD28N03L
A
10 2
tp = 28.0µs
100 µs
10 1
1 ms
10 ms
DC
0
0
20 40 60 80 100 120 140 160 °C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPD28N03L
K/W
10 0
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
0
10
-1
10 0
Semiconductor Group
10 1 V 10 2
VDS
5
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SPD28N03L.PDF ] | |
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