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IRL3215PBF の電気的特性と機能

IRL3215PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRL3215PBF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRL3215PBF Datasheet, IRL3215PBF PDF,ピン配置, 機能
PD - 95405
IRL3215PbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
HEXFET® Power MOSFET
D
VDSS = 150V
G RDS(on) = 0.166
S ID = 12A…
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
12 …
8.5
48
80
0.53
±16
130
7.2
8.0
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.9
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
6/17/04

1 Page





IRL3215PBF pdf, ピン配列
10
TOTOP P
V1V5G1VG5SSV
101V0V
8.0V5V
74.0.5VV
63.0.5VV
BBOOTTTTOOMM 22554.....75055VVV350VVV
1
0.1 2.5V
0.01
0.1
20µs PULSE WIDTH
TJ= 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRL3215PbF
10 VVGGSS
TTOOPP 151V5V
101V0V
8.05VV
74.0.5VV
63.0.5VV
1 BBOOTTTTOOMM22554.....75505350VVVVVV
0.1
2.5V
0.01
0.1
20µs PULSE WIDTH
TJ= 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
10
TJ = 25° C
TJ = 175° C
1
0.1
2.0
V DS= 50V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 12A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRL3215PBF 電子部品, 半導体
IRL3215PbF
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
300 ID
TOP
2.9A
250 5.1A
BOTTOM 7.2A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRL3215PBF

HEXFET Power MOSFET

International Rectifier
International Rectifier


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