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PDF VNQ690SP Data sheet ( Hoja de datos )

Número de pieza VNQ690SP
Descripción QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
Fabricantes STMicroelectronics　
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No Preview Available ! VNQ690SP Hoja de datos, Descripción, Manual

® VNQ690SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ690SP
RDS(on)
90mΩ (*)
IOUT
10 A
VCC
36 V
(*) Per each channel
s OUTPUT CURRENT PER CHANNEL: 10A
s CMOS COMPATIBLE INPUTS
s OPEN LOAD DETECTION (OFF STATE)
s UNDERVOLTAGE & OVERVOLTAGE
n SHUT- DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
n LOSS OF GROUND & LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
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DESCRIPTION
The VNQ690SP is a monolithic device made by
using| STMicroelectronics VIPower M0-3
10
1
PowerSO-10™
ORDER CODES
PACKAGE
TUBE
T&R
PowerSO-10 VNQ690SP VNQ690SP13TR
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
ABSOLUTE MAXIMUM RATING
Symbol
VCC
-VCC
IOUT
IR
IIN
ISTAT
IGND
VESD
Ptot
EMAX
Tj
Tstg
Parameter
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), per each channel
Reverse output current (continuous), per each channel
Input current
Status current
Ground current at TC<25°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- VCC
Power dissipation at TC=25°C
Maximum Switching Energy
(L=0.38mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=14A)
Junction operating temperature
Storage temperature
(**) See application schematic at page 8
Value
41
-0.3
Internally limited
-15
+/- 10
+/- 10
-200
Unit
V
V
A
A
mA
mA
mA
4000
4000
5000
5000
78
53
-40 to 150
-65 to 150
V
V
V
V
W
mJ
°C
°C
Rev. 1
July 2004
1/19

1 page




VNQ690SP pdf
VNQ690SP
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R 7637/1
Test Pulse
I
II
1
-25 V
-50 V
2
+25 V
+50 V
3a
-25 V
-50 V
3b
+25 V
+50 V
4 -4 V -5 V
TEST LEVELS
III IV
-75 V
+75 V
-100 V
+75 V
-6 V
-100 V
+100 V
-150 V
+100 V
-7 V
Delays and
Impedance
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
I
C
C
C
C
C
C
Test Levels Result
II III
CC
CC
CC
CC
CC
EE
IV
C
C
C
C
C
E
Class
C
E
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
SWITCHING CHARACTERISTICS
VLOAD
80%
dVOUT/dt(on)
VIN
td(on)
tr
90%
10%
td(off)
dVOUT/dt(off)
t
t
5/19
1

5 Page





VNQ690SP arduino
VNQ690SP
On State Resistance Vs Tcase
Ron (mOhm)
160
140
Iout=1A
Vcc=9V; 18V & 36V
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
ILIM Vs Tcase
Ilim (A)
25
22.5
Vcc=13V
20
17.5
15
12.5
10
7.5
5
-50 -25
0
25 50 75 100 125 150 175
Tc (ºC)
Input Low Level
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
On State Resistance Vs VCC
Ron (mOhm)
160
140
Tc= 150ºC
120
Iout=1A
100
80
Tc= 25ºC
60
Tc= -40ºC
40
20
0
5 10 15 20 25 30 35 40
Vcc (V)
Input High Level
Vih (V)
4
3.75
3.5
3.25
3
2.75
2.5
2.25
2
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
Input Hysteresis Voltage
Vihyst (V)
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
11/19

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