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G4PH30KDのメーカーはInternational Rectifierです、この部品の機能は「IRG4PH30KD」です。 |
部品番号 | G4PH30KD |
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部品説明 | IRG4PH30KD | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとG4PH30KDダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
PD- 91579A
IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
G
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces IRGPH30MD2 products
• For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
20
10
40
40
10
40
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
1.2
2.5
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
2/7/2000
1 Page www.DataSheet4U.com
15
10
S qua re wave:
60% of rated
v olta ge
I
5
Ideal diodes
IRG4PH30KD
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 24W
0
0.1 1 10
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100 100
10
TJ = 150 °C
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
6 8 10 12 14
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages www.DataSheet4U.com
IRG4PH30KD
8.0 RGG = =23OΩhm
T J = 150 °C
VCC = 800V
VGE = 15V
6.0
100
VGE = 20V
T J = 125 oC
4.0 10
2.0
0.0
0
SAFE OPERATING AREA
5 10 15 20
1
1
10
100
1000
10000
I C, Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector Current
100
Fig. 12 - Turn-Off SOA
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.0 2.0 4.0 6.0 8.0
Forward V oltage D rop - V FM (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
G4PH30KD | IRG4PH30KD | International Rectifier |