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G4PH30KD の電気的特性と機能

G4PH30KDのメーカーはInternational Rectifierです、この部品の機能は「IRG4PH30KD」です。


製品の詳細 ( Datasheet PDF )

部品番号 G4PH30KD
部品説明 IRG4PH30KD
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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G4PH30KD Datasheet, G4PH30KD PDF,ピン配置, 機能
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PD- 91579A
IRG4PH30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
G
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
E
n-channel
Benefits
Latest generation 4 IGBT's offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces IRGPH30MD2 products
For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.10V
@VGE = 15V, IC = 10A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
20
10
40
40
10
40
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
1.2
2.5
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
2/7/2000

1 Page





G4PH30KD pdf, ピン配列
www.DataSheet4U.com
15
10
S qua re wave:
60% of rated
v olta ge
I
5
Ideal diodes
IRG4PH30KD
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 24W
0
0.1 1 10
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100 100
10
TJ = 150 °C
TJ = 25 °C
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
10
TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
6 8 10 12 14
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


G4PH30KD 電子部品, 半導体
www.DataSheet4U.com
IRG4PH30KD
8.0 RGG = =23Ohm
T J = 150 °C
VCC = 800V
VGE = 15V
6.0
100
VGE = 20V
T J = 125 oC
4.0 10
2.0
0.0
0
SAFE OPERATING AREA
5 10 15 20
1
1
10
100
1000
10000
I C, Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector Current
100
Fig. 12 - Turn-Off SOA
10
TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.0 2.0 4.0 6.0 8.0
Forward V oltage D rop - V FM (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

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部品番号部品説明メーカ
G4PH30KD

IRG4PH30KD

International Rectifier
International Rectifier


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