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G2N7002 の電気的特性と機能

G2N7002のメーカーはGTMです、この部品の機能は「N-CHANNELTRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 G2N7002
部品説明 N-CHANNELTRANSISTOR
メーカ GTM
ロゴ GTM ロゴ 




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G2N7002 Datasheet, G2N7002 PDF,ピン配置, 機能
G2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS TRANSISTOR
Package Dimensions
1/3
Absolute Maximum Ratings at Ta = 25
Parameter
Operating Junction and Storage Temperature Range
Symbol
Tj, Tstg
Drain-Source Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (tp 50us)
Continuous Drain Current
Ta=25 (1)
Ta=100 (1)
Pulsed Drain Current (Ta=25 ) (2)
Power Dissipation
Ta=25
Ta=100
Thermal Resistance ,Junction-to-Ambient
VGS
VGSM
ID
IDM
PD
RthJA
Characteristics at Ta = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Symbol
BVDSS
VGS(th)
IGSS
Idss
ID(ON)
Static Drain-Source on-State Resistance RDS(ON)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
GFS
Ciss
Coss
Crss
Min.
60
1
-
-
500
-
-
-
-
80
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-55 ~ +150
60
20
40
115
73
800
0.2
0.08
625
Unit
V
V
V
mA
mA
W
/W
Max.
-
2.5
100
1
-
7.5
13.5
7.5
13.5
-
50
25
5
Unit
V
V
nA
uA
mA
mS
pF
pF
pF
Test Conditions
VGS=0, ID=10uA
VDS=2.5V, ID=0.25mA
VGS= 20V, VDS=0
VDS=60V, VGS=0
VDS =7.5V ,VGS=10V
Id=50mA, VGS=5V
25
125
Id=500mA, VGS=10V
25
125
VDS>2 VDS(ON), ID=200mA
VDS=25V, VGS=0V, f=1MHz

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G2N7002 pdf, ピン配列
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Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165


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共有リンク

Link :


部品番号部品説明メーカ
G2N7000

N-CHANNEL ENHANCEMENT MODE MOSFET

GTM
GTM
G2N7002

N-CHANNELTRANSISTOR

GTM
GTM
G2N7002K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM
GTM


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