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FQP10N50CFのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | FQP10N50CF |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQP10N50CFダウンロード(pdfファイル)リンクがあります。 Total 10 pages
FQP10N50CF / FQPF10N50CF
500V N-Channel MOSFET
December 2006
FRFETTM
Features
• 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 16pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP10N50CF FQPF10N50CF
500
10 10*
6.35 6.35*
40 40*
± 30
388
10
14.3
4.5
143 48
1.14 0.38
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N50CF
0.87
62.5
FQPF10N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
FQP10N50CF / FQPF10N50CF Rev. A
1
www.fairchildsemi.com
1 Page Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
100
10-1
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
VGS = 10V
1.0
VGS = 20V
0.5
Note : TJ = 25
0 5 10 15 20 25 30 35
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 6. Gate Charge Characteristics
4000
3000
2000
1000
0
10-1
Coss
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note :
1. VGS = 0 V
2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
12
V = 100V
DS
10
VDS = 250V
8 VDS = 400V
6
4
2
* Note : ID = 10A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
FQP10N50CF / FQPF10N50CF Rev. A
3
www.fairchildsemi.com
3Pages Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQP10N50CF / FQPF10N50CF Rev. A
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
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部品番号 | 部品説明 | メーカ |
FQP10N50CF | N-Channel MOSFET | Fairchild Semiconductor |