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FDZ193P の電気的特性と機能

FDZ193PのメーカーはFairchild Semiconductorです、この部品の機能は「P-Channel 1.7V PowerTrench WL-CSP MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDZ193P
部品説明 P-Channel 1.7V PowerTrench WL-CSP MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDZ193P Datasheet, FDZ193P PDF,ピン配置, 機能
December 2006
FDZ193P
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
-20V, -1A, 90mΩ
Features
General Description
tm
„ Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A
„ Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A
„ Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A
„ Occupies only 1.5 mm2 of PCB area Less than 50% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
„ RoHS Compliant
Designed on Fairchild's advanced 1.7V PowerTrench® process
with state of the art "low pitch" WLCSP packaging process, the
FDZ193P minimizes both PCB space and rDS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low rDS(on).
Application
„ Battery management
„ Load switch
„ Battery protection
S
S
D
S
D
PIN 1
PIN 1
G
www.DataSheet4U.com
S
G
BOTTOM
TOP
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-3
-15
1.5
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
83
140
°C/W
Device Marking
2
Device
FDZ193P
Package
WL-CSP
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
©2006 Fairchild Semiconductor Corporation
FDZ193P Rev.C1 (W)
1
www.fairchildsemi.com

1 Page





FDZ193P pdf, ピン配列
Typical Characteristics TJ = 25°C unless otherwise noted
16
VGS = -4.5V
14
12
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
VGS = -3V
10
8
VGS = -3.5V
VGS = -2.5V
6
4 VGS = -2V
2
VGS = -1.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
2.0
1.8 VGS = -2V
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
1.6
VGS = -2.5V
1.4 VGS = -3V
1.2
VGS = -3.5V
1.0 VGS = -4.5V
0.8
0
2 4 6 8 10 12 14 16
-ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.4
ID = -1A
1.3 VGS = -4.5V
1.2
1.1
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
240
ID = -1A
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
200
160
120 TJ = 125oC
80 TJ = 25oC
40
1.5
2.0 2.5 3.0 3.5 4.0 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
5.0
16
14
PULSE DURATION = 300μs
DUTY CYCLE = 2.0%MAX
12 VDD = -5V
10
8
6 TJ = 125oC
4 TJ = 25oC
2 TJ = -55oC
0
0.0 0.5 1.0 1.5 2.0 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 5. Transfer Characteristics
10
VGS = 0V
1
TJ = 125oC
0.1
0.01
TJ = 25oC
1E-3
TJ = -55oC
1E-4
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDZ193P Rev.C1 (W)
3 www.fairchildsemi.com


3Pages


FDZ193P 電子部品, 半導体
FDZ193P Rev.C1 (W)
6 www.fairchildsemi.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FDZ193P

P-Channel 1.7V PowerTrench WL-CSP MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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