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2SA1932 の電気的特性と機能

2SA1932のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon PNP Epitaxial Type Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SA1932
部品説明 Silicon PNP Epitaxial Type Transistor
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 




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2SA1932 Datasheet, 2SA1932 PDF,ピン配置, 機能
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1932
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1932
Unit: mm
High transition frequency: fT = 70 MHz (typ.)
Complementary to 2SC5174
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1 A
Base current
IB
0.1
A
Collector power dissipation
Junction temperature
Storage temperature range
PC 1.8 W
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09

1 Page





2SA1932 pdf, ピン配列
1.0
0.8
0.6
0.4
0.2
0
0
IC – VCE
20 10
8
6
4
IB = 2 mA
Common emitter
Ta = 25°C
2 4 6 8
Collector-emitter voltage VCE (V)
10
1000
500
300
100
50
30
hEF – IC
Common emitter
VCE = 5 V
Ta = 100°C
25
25
10
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
2SA1932
IC – VBE
1.0
0.8
Common emitter
VCE = 5 V
0.6
Ta = 100°C
25
25
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 10
1
0.5
0.3
0.1
0.05
0.03
Ta = 100°C
25
25
0.01
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
500
Common emitter
300 VCE = 10 V
Ta = 25°C
fT – IC
100
50
30
10
5 10
30
100
300
Collector current IC (mA)
1000
3
2006-11-09


3Pages





ページ 合計 : 5 ページ
 
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共有リンク

Link :


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