Datasheet 2SA1943 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2SA1943	PNP Epitaxial Silicon Transistor PNP 硅外延晶体管 PNP Epitaxial Silicon Transistor R 2SA1943 SERIES 用途 应用于功率放大器产品特性 高集电极电压：VCEO=230V (min) VCEO=250V (min) 与 2SC5200 互补 推荐用于 100W 音响频率放大器输出电路 环保（RoHS）产品 APPLICATIONS  P	JILIN SINO	transistor
2	2SA1943	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 2	Toshiba Semiconductor	transistor
3	2SA1943	PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS  FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 TO-3PL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Packag	Unisonic Technologies	transistor
4	2SA1943	PNP Epitaxial Silicon Transistor 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = -17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A	Fairchild Semiconductor	transistor
5	2SA1943	Silicon PNP Power Transistors SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1943 www.datasheet4u.com DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5200 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING P	Savantic	transistor

2SA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2SA0683	Transistor, Silicon PNP Epitaxial Type Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating	Panasonic Semiconductor	transistor
2	2SA0684	Transistor, Silicon PNP Epitaxial Type Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating	Panasonic Semiconductor	transistor
3	2SA0879	Transistor, Silicon PNP Epitaxial Type Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base vo	Panasonic Semiconductor	transistor
4	2SA0885	Transistor, Silicon PNP Epitaxial Type Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t	Panasonic Semiconductor	transistor
5	2SA0886	Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter volt	Panasonic Semiconductor	transistor
6	2SA100	Ge PNP Drift	ETC	transistor
7	2SA1001	Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY	Inchange Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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