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MMBT2132T3 の電気的特性と機能

MMBT2132T3のメーカーはMotorola Semiconductorsです、この部品の機能は「(MMBT2132T1 / MMBT2132T3) General Purpose Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBT2132T3
部品説明 (MMBT2132T1 / MMBT2132T3) General Purpose Transistors
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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MMBT2132T3 Datasheet, MMBT2132T3 PDF,ピン配置, 機能
MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2132T1/D
Product Preview
General Purpose Transistors
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
Rq JA
PD
PD
Rq JA
TJ, Tstg
Value
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
MMBT2132T1
MMBT2132T3
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
65
4
1
23
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 m Adc)
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter–Base Breakdown Voltage
(IE = 100 m Adc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
V(BR)CBO
Vdc
40 — —
V(BR)CEO
Vdc
30 — —
V(BR)EBO
Vdc
5.0 — —
ICBO
m Adc
— — 1.0
— — 10
IEBO
m Adc
— — 10
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150 —
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
— 0.25
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
— 0.4
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
— 1.1
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
— 1.0
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2square FR–4 Board (1sq. 2 oz Cu 0.06thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Vdc
Vdc
Vdc
Vdc
Vdc
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
3–1

1 Page





MMBT2132T3 pdf, ピン配列
0.2
IC/IB = 100
0.15
0.1
0°C
25°C
T = 85°C
1.0
0.75
0.5
MMBT2132T1 MMBT2132T3
–40°C
25°C
150°C
0.05
0
0.01
0.1
IC, COLLECTOR CURRENT (A)
1.0
Figure 7. Collector–Emitter Saturation Voltage
0.25
0
0.0001
VCE = 1.0 V
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 8. VBE(on) Voltage
1.0
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
0.001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZθJA(t) = r(t) RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
0.01 0.1
TIME (sec)
1.0
10 100
Figure 9. Thermal Response Curve
Motorola Bipolar Power Transistor Device Data
3–3


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共有リンク

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部品番号部品説明メーカ
MMBT2132T1

General Purpose Transistors

ON
ON
MMBT2132T1

(MMBT2132T1 / MMBT2132T3) General Purpose Transistors

Motorola Semiconductors
Motorola Semiconductors
MMBT2132T3

General Purpose Transistors

ON
ON
MMBT2132T3

(MMBT2132T1 / MMBT2132T3) General Purpose Transistors

Motorola Semiconductors
Motorola Semiconductors


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