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PDF MCR218-2 Data sheet ( Hoja de datos )
| Número de pieza | MCR218-2 | |
| Descripción | (MCR218-x) Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
| Fabricantes | ON Semiconductor | |
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MCR218−2, MCR218−4,
MCR218−6
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.
Features
• Glass-Passivated Junctions
• Blocking Voltage to 400 Volts
• TO-220 Construction − Low Thermal Resistance, High Heat
Dissipation and Durability
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 125°C, Gate Open)
MCR218−2
MCR218−4
MCR218−6
VDRM,
VRRM
50
200
400
V
On-State RMS Current
(180° Conduction Angles; TC = 70°C)
IT(RMS)
8.0
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Considerations (t = 8.3 ms)
ITSM
I2t
100 A
26 A2s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 70°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
PGM
PG(AV)
5.0
0.5
W
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TC = 70°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
http://onsemi.com
SCRs
8 AMPERES RMS
50 thru 400 VOLTS
G
AC
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A−07
STYLE 3
AY WW
MCR218x−G
AKA
A
Y
WW
MCR218x
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
x = 2, 4 or 6
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MCR218−2
TO220AB 500 Units/Bulk
MCR218−2G
TO220AB
(Pb−Free)
500 Units/Bulk
MCR218−4
TO220AB 500 Units/Bulk
MCR218−4G
MCR218−6
TO220AB
(Pb−Free)
TO220AB
500 Units/Bulk
500 Units/Bulk
MCR218−6G
TO220AB
(Pb−Free)
500 Units/Bulk
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR218/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MCR218-2.PDF ] | |
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