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Número de pieza | STSJ3NM50 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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STSJ3NM50
N-CHANNEL 500V - 2.5Ω - 3A PowerSO-8
Zener-Protected MDmesh™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STSJ3NM50
500 V
<3Ω
3A
s TYPICAL RDS(on) = 2.5 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
PowerSO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TA = 25°C (1)
Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT
PTOT
Total Dissipation at TC = 25°C
Total Dissipation at TA = 25°C (1)
Derating Factor (1)
dv/dt (3) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
DRAIN CONTACT ALSO ON THE BACKSIDE
Value
500
500
± 30
3
0.63
1.89
12
70
3
0.02
15
– 65 to 150
Unit
V
V
V
A
A
A
A
W
W
W/°C
V/ns
°C
August 2002
1/8
1 page Normalized Gate Threshold Voltage vs Temp.
STSJ3NM50
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVdss vs Temperature
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet STSJ3NM50.PDF ] |
Número de pieza | Descripción | Fabricantes |
STSJ3NM50 | N-CHANNEL POWER MOSFET | ST Microelectronics |
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