DataSheet.jp

2SA1020 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SA1020
部品説明 One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 

Total 4 pages
		

No Preview Available !

2SA1020 Datasheet, 2SA1020 PDF,ピン配置, 機能
www.DataSheet4U.com
2SA1020
Preferred Device
One Watt High Current
PNP Transistor
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE 50 Vdc
VCB 50 Vdc
VEB 5.0 Vdc
IC 2.0 Adc
PD 900 mW
5.0 mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction Temperature TJ, Tstg −55 to
Range
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
COLLECTOR
2
3
BASE
PNP
1
EMITTER
1
23
TO−92 (TO−226)
CASE 29−10
STYLE 14
MARKING DIAGRAM
2SA
1020
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2SA1020/D

1 Page





ページ 合計 : 4 ページ
PDF
ダウンロード
[ 2SA1020.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
2SA102

There is a function of (2SA100 - 2SA104) Ge PNP Drift.

ETC
ETC
2SA1020

There is a function of TRANSISTOR (POWER AMPLIFIER APPLICATIONS).

Toshiba Semiconductor
Toshiba Semiconductor
2SA1020

There is a function of TO-92MOD Plastic-Encapsulated Transistors.

ETC
ETC
2SA1020

There is a function of PNP EPITAXIAL SILICON TRANSISTOR.

Unisonic Technologies
Unisonic Technologies

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap