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PDF STS8DNH3LL Data sheet ( Hoja de datos )
| Número de pieza | STS8DNH3LL | |
| Descripción | Dual N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STS8DNH3LL
DUAL N-CHANNEL 30V - 0.018 Ω - 8A SO-8
LOW GATE CHARGE STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS8DNH3LL
30 V <0.022 Ω
8A
■ TYPICAL RDS(on) = 0.018Ω
■ OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific MOSFET is the Third generation
of STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows the
best trade-off between on-resistance and gate charge.
When used as high and low side in buck regulators, it
gives the best performance in terms of both conduction
and switching losses. This is extremely important for
motherboards where fast switching and high efficiency
are of paramount importance.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
SO-8
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS8DNH3LL
MARKING
S8DNH3LL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
June 2004
PACKAGE
SO-8
PACKAGING
TAPE & REEL
Value
30
30
± 16
8
5
32
2
Rev.0.2
Unit
V
V
V
A
A
A
W
1/9
1 page  
Normalized Gate Threshold Voltage vs Temperature
STS8DNH3LL
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature.
..
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STS8DNH3LL.PDF ] | |
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