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PDF STC5NF30V Data sheet ( Hoja de datos )

Número de pieza STC5NF30V
Descripción N-CHANNEL POWER MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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STC5NF30V
N-CHANNEL 30V - 0.027 Ω - 5A TSSOP8
2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STC5NF30V
30 V
< 0.031 Ω ( @ 4.5 V )
< 0.035 Ω ( @ 2.7 V )
5A
s TYPICAL RDS(on) = 0.027 Ω @ 4.5 V
s TYPICAL RDS(on) = 0.031 Ω @ 2.7 V
s ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
TSSOP8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
June 2003
.
Value
30
20
± 12
5
3
20
1.5
Unit
V
V
V
A
A
A
W
1/8

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STC5NF30V pdf
Normalized Gate Threshold Voltage vs Temperature
STC5NF30V
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Thermal resistance and max power
..
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