|
|
Número de pieza | STB85NF55L | |
Descripción | N-channel Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STB85NF55L (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! www.DataSheet4U.com
STB85NF55L
STP85NF55L
N-CHANNEL 55V - 0.0060 Ω - 80A D2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STP85NF55L
STB85NF55L
55 V
55 V
<0.008 Ω
<0.008 Ω
s TYPICAL RDS(on) = 0.0060 Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
ID
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STP85NF55L
STB85NF55L
STB85NF55LT4
MARKING
P85NF55L
B85NF55L
B85NF55L
PACKAGE
TO-220
D2PAK
D2PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID(•)
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Current Limited by Package.
(••) Pulse width limited by safe operating area.
September 2002
Value
55
55
± 15
80
80
320
300
2.0
10
980
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V
1/10
1 page Normalized Gate Threshold Voltage vs Temperature
STB85NF55L STP85NF55L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet STB85NF55L.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB85NF55 | N-channel Power MOSFET | ST Microelectronics |
STB85NF55L | N-channel Power MOSFET | ST Microelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |