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PDF STB85NF3LL-1 Data sheet ( Hoja de datos )
| Número de pieza | STB85NF3LL-1 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP85NF3LL
STB85NF3LL-1
N-CHANNEL 30V - 0.006Ω - 85A TO-220/I2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STP85NF3LL
STB85NF3LL-1
30 V < 0.008 Ω
30 V < 0.008 Ω
85 A
85 A
s TYPICAL RDS(on) = 0.0075 Ω (@4.5V)
s OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
3
2
1
123
DESCRIPTION
This application specific Power MOSFET is the
third genaration of STMicroelectronics unique “
Single Feature Size” strip-based process. The re-
sulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
TO-220
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
March 2001
Value
30
30
± 15
85
60
340
110
0.73
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
1/9
1 page  
STP85NF3LL/STB85NF3LL-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STB85NF3LL-1.PDF ] | |
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