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STD100N3LF3のメーカーはST Microelectronicsです、この部品の機能は「N-channel Power MOSFET」です。 |
部品番号 | STD100N3LF3 |
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部品説明 | N-channel Power MOSFET | ||
メーカ | ST Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSTD100N3LF3ダウンロード(pdfファイル)リンクがあります。 Total 15 pages
www.DataSheet4U.com
STD100N3LF3
STU100N3LF3
N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK
Planar STripFET™ II Power MOSFET
General features
Type
VDSSS RDS(on) ID Pw
STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W
STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W
1. Current limited by package
■ 100% avalanche tested
■ Logic level threshold
Description
This Power MOSFET is the latest refinement of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics, low gate charge and less critical
alignment steps therefore a remarkable
manufacturing reproducibility. This new improved
device has been specifically designed for
Automotive application and DC-DC converters.
3
1
DPAK
3
2
1
IPAK
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STD100N3LF3
STU100N3LF3
February 2007
Marking
100N3LF3
100N3LF3
Package
DPAK
IPAK
Rev 1
Packaging
Tape & reel
Tube
1/15
www.st.com
15
1 Page STD100N3LF3 - STU100N3LF3
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
ID (1)
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
Tstg Storage temperature
TJ Max. operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area
3. ISD ≤80A, di/dt ≤360 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
Not-repetitive avalanche current
IAR (pulse width limited by TJ max)
Single pulsed avalanche energy
EAS (starting TJ = 25°C, ID = IAV, VDD = 24V
Electrical ratings
Value
30
80
70
320
110
0.73
3.9
-55 to 175
Unit
V
A
A
A
W
W/°C
V/ns
°C
Value
1.36
100
275
Value
40
500
Unit
°C/W
°C/W
°C
Unit
A
mJ
3/15
3Pages Electrical characteristics
STD100N3LF3 - STU100N3LF3
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characteristics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
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6 Page | |||
ページ | 合計 : 15 ページ | ||
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PDF ダウンロード | [ STD100N3LF3 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
STD100N3LF3 | N-channel Power MOSFET | ST Microelectronics |