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Número de pieza | STP135N10 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | ST Microelectronics | |
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STB135N10
STP135N10
N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220
LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STB135N10
STP135N10
100 V
100 V
<0.009 Ω 135 A(*)
<0.009 Ω 135 A(*)
s TYPICAL RDS(on) = 0.007Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
This MOSFET is the result of STMicroelectronics’s well
established and consolidated STripFET technology utiliz-
ing the most recent layout optimization. The device exhib-
its extremely low on-resistance, gate charge and diode’s
reverse recovery charge Qrr making it the ideal switch in
a very large spectrum of applications such as Automotive,
Consumer, Telecom and Industrial.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s PRIMARY SWITCH IN TELECOM DC-DC
CONVERTER
s HIGH-EFFICIENCY DC-DC CONVERTERS
s 42V AUTOMOTIVE APPLICATIONS
s SYNCHRONOUS RECTIFICATION
s DIESEL INJECTION
s PWM UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(*) Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(1)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(1) Pulse width limited by safe operating area.
(*) Value limited by wire bonding
Value
100
100
± 20
135
96
540
150
1
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(2) ISD ≤ 40A, di/dt ≤ 600A/µs, VDD ≤BVDSS, Tj ≤ TJMAX.
(3) Starting Tj = 25 oC, ID = 40A, VDD = 50V
July 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
1/8
1 page STB135N10 STP135N10
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.21
8.95
10
4.88
15
1.27
1.4
2.4
0°
D2PAK MECHANICAL DATA
mm.
TYP.
8
8.5
0.4
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
3.2
8°
MIN.
0.173
0.098
0.001
0.028
0.045
0.018
0.048
0.352
0.394
0.192
0.591
0.050
0.055
0.094
0°
inch.
TYP.
0.315
0.334
0.015
TYP.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
8°
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet STP135N10.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP135N10 | N-channel Power MOSFET | ST Microelectronics |
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