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PDF STB30NE06L Data sheet ( Hoja de datos )
| Número de pieza | STB30NE06L | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB30NE06L
N-CHANNEL 60V - 0.035 Ω - 30A D2PAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB30NE06L
60 V
<0.05 Ω
30 A
s TYPICAL RDS(on) = 0.035Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
3
1
D2PAK
TO-263
(suffix“T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area.
November 2000
Value
60
60
±20
30
21
120
80
0.53
–60 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
1/6
1 page  
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
10
4.88
15
1.27
1.4
2.4
0º
D2PAK MECHANICAL DATA
mm.
TYP
8
8.5
0.4
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
3.2
8º
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
STB30NE06L
inch
TYP.
0.315
0.334
0.015
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STB30NE06L.PDF ] | |
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