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PDF STB3NC90Z Data sheet ( Hoja de datos )

Número de pieza STB3NC90Z
Descripción N-CHANNEL Power MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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STB3NC90Z
N-CHANNEL 900V - 3.2- 3.5A D2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STB3NC90
900V
< 3.5
3.5 A
s TYPICAL RDS(on) = 3.2
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
3
1
D2PAK
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
900
900
± 25
3.5
2.2
14
100
0.8
±50
2.5
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
°C
°C
(1)ISD 3.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*).Limited only by maximum temperature allowed
1/9

1 page




STB3NC90Z pdf
Gate Charge vs Gate-source Voltage
Capacitance Variations
STB3NC90Z
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9

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