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PDF STB3NC60 Data sheet ( Hoja de datos )
| Número de pieza | STB3NC60 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STB3NC60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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® STB3NC60
N - CHANNEL 600V - 3.3Ω - 3A - D2PAK/I2PAK
PowerMESH™ ΙΙ MOSFET
TYPE
STB3NC60
VDSS
600 V
RDS(on)
< 3.6 Ω
ID
3A
ν TYPICAL RDS(on) = 3.3 Ω
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν VERY LOW INTRINSIC CAPACITANCES
ν GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITCH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
I2PAK
TO-262
(Suffix "-1")
3
1
D2PAK
TO-263
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
600
600
± 30
3
1.9
12
80
0.64
4
-65 to 150
150
(1) ISD ≤3A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
February 2000
1/9
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STB3NC60
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STB3NC60.PDF ] | |
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