|
|
PDF STB3NB60 Data sheet ( Hoja de datos )
| Número de pieza | STB3NB60 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STB3NB60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
® STB3NB60
N - CHANNEL 600V - 3.3Ω - 3.3A - D2PAK/I2PAK
PowerMESH™ MOSFET
TYPE
STB3NB60
V DSS
600 V
RDS(on)
<3.6 Ω
ID
3.3 A
s TYPICAL RDS(on) = 3.3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
1
D2PAK
TO-263
(Suffix ”T4”)
123
I2PAK
TO-262
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
Uni t
600 V
600 V
± 30
V
3.3 A
2.1 A
13.2
A
80
0.64
W
W/oC
4.5
-65 to 150
150
(1) ISD ≤3.3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ ns
oC
oC
June 1998
1/9
1 page  
Normalized Gate-source Threshold Voltage vs
Temperature
STB3NB60
Normalized On Resistence vs Temperature
Source-Drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STB3NB60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STB3NB60 | N-CHANNEL Power MOSFET | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |