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PDF FQP13N50CF Data sheet ( Hoja de datos )
| Número de pieza | FQP13N50CF | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
May 2006
FRFET TM
Features
• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
G
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP13N50CF FQPF13N50CF
500
13 13*
8 8*
52 52*
± 30
530
13
19.5
4.5
195 48
1.56 0.39
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP13N50CF
0.64
62.5
FQPF13N50CF
2.58
62.5
Unit
°C/W
°C/W
© 2006 Fairchild Semiconductor Corporation
FQP13N50CF / FQPF13N50CF Rev. A1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP13N50CF
100
D =0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
single pulse
N otes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t)
F
T
= 0.64 /W M
a
C
ct
=
o r,
PD
MD*=Zt 1θ/
t2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FQPF13N50CF
D =0.5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
sing le p ulse
1 0 -2
N otes :
1.
2.
3.
ZDθu JtCy(
TJM -
t)
F
T
= 2.58 /W M
a
C
ct
=
or,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
FQP13N50CF / FQPF13N50CF Rev. A1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQP13N50CF.PDF ] | |
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