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PDF FXT555 Data sheet ( Hoja de datos )
| Número de pieza | FXT555 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
FXT555
REFER TO ZTX555 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
B
C
E
E-Line
TO92 Compatible
VALUE
-160
-150
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -160
V IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO -150
V IC=-10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V IE=-100µA, IC=0
Collector Cut-Off
Current
ICBO
-0.1 µA
VCB=-140V
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.1 µA
-0.3 V
VEB=-4V, IC=0
IC=-100mA, IB=-10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1 V
IC=-100mA, IB=-10mA*
Base-Emitter
Turn-on Voltage
VBE(on)
-1 V
IC=-100mA, VCE=-10V*
Static Forward Current hFE
Transfer Ratio
Transition
Frequency
fT
50
50
100
IC=-10mA, VCE=-10V*
300 IC=-300mA, VCE=-10V*
MHz IC=-50mA, VCE=-10V*
f=100MHz
Output Capacitance
Cobo
10 pF VCE=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-40
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FXT555.PDF ] | |
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