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GE200NB60S の電気的特性と機能

GE200NB60SのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 GE200NB60S
部品説明 N-CHANNEL IGBT
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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GE200NB60S Datasheet, GE200NB60S PDF,ピン配置, 機能
www.DataSheet4U.com
STGE200NB60S
N-channel 150A - 600V - ISOTOP
Low drop PowerMESH™ IGBT
General features
TYPE
VCES
VCE(sat)
(typ.)
IC
1.2V 150A
STGE200NB60S 600V
1.3V 200A
TC
100°C
25°C
High input impedance (voltage driven)
Low on-voltage drop (Vcesat)
Off losses include tail current
Low gate charge
High current capability
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “S” identifies a family
optimized to achieve very low VCE(sat) (@ max
frequency of 1KHz).
Applications
Low frequency motor controls
Aluminum welding equipment
ISOTOP
Internal schematic diagram
Order codes
Part number
STGE200NB60S
Marking
GE200NB60S
Package
ISOTOP
Packaging
Tube
November 2006
Rev 8
1/13
www.st.com
13

1 Page





GE200NB60S pdf, ピン配列
STGE200NB60S
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
VGE
IC
IC
ICM (1)
PTOT
Collector-emitter voltage (VGS = 0)
Gate-emitter voltage
Collector current (continuous) at TC = 25°C
Collector current (continuous) at TC = 100°C
Collector current (pulsed)
Total dissipation at TC = 25°C
Derating factor
VISO
Tstg
Tj
Insulation winthstand voltage (DC)
Storage temperature
Operating junction temperature
1. Pulse width limited by safe operating area
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Electrical ratings
Value
600
±20
200
150
400
600
4.8
2500
– 55 to 150
Unit
V
V
A
A
A
W
W/°C
V
°C
Value
0.208
30
Unit
°C/W
°C/W
°C/W
3/13


3Pages


GE200NB60S 電子部品, 半導体
Electrical characteristics
STGE200NB60S
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics
Figure 2. Transfer characteristics
Figure 3. Transconductance
Figure 4. Collector-emitter on voltage vs
temperature
Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations
6/13

6 Page



ページ 合計 : 13 ページ
 
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共有リンク

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部品番号部品説明メーカ
GE200NB60S

N-CHANNEL IGBT

ST Microelectronics
ST Microelectronics


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