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PDF SBW-5089 Data sheet ( Hoja de datos )

Número de pieza SBW-5089
Descripción Cascadable InGaP/GaAs HBT MMIC Amplifier
Fabricantes Sirenza Microdevices 
Logotipo Sirenza Microdevices Logotipo



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Preliminary Data Sheet
Product Description
Sirenza Microdevices’ SBW-5089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC
Amplifier. A Darlington configuration designed with InGaP
process technology provides broadband performance up to
8 GHz with excellent thermal perfomance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction non-
linearities results in higher suppression of intermodulation
products. Only a single positive supply voltage, DC-blocking
capacitors, a bias resistor, and an optional RF choke are
required for operation.
Gain & Return Loss Vs. Frequency
See App Circuit Page 6
30
20
10 S21
0
-10 S22
-20 S11
-30
012345678
Frequency (GHz)
SBW-5089
DC-8 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Wideband Flat Gain to 3GHz: +/-1.4dB
• P1dB = 13.4 @ 6GHz
• Input / Output VSWR < 2:3 to 8GHz
• Operates From Single Supply
• Low Thermal Resistance
• Darlington Configuration
Applications
• Wideband Instrumentation
• Fiber Optic Driver
• OC-48
• Basestation
• SAT COM
Symbol
Parameter
Units
Frequency
Min.
Typ. Max.
G
Small Signal Gain
( PC board and connector losses de-embeded )
850 MHz
19.3
20.3
21.3
dB
3000 MHz
4200 MHz
17.0
16.2
18.0
17.2
19.0
18.2
6000 MHz
14.5
15.5
16.5
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
18.4
20.1
19.4
OIP3
Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
32.0
35.5
34.0
Pout
Output Power @ -45dBc ACP IS-95
9 Forward Channels
dBm
1950MHz
13.0
Bandwidth Determined by Return Loss (>10dB)
MHz
6000
IRL Worst case Input Return Loss
dB DC-6000MHz 7
10
ORL
Worst case Output Return Loss
dB DC-6000MHz 8
11
NF Noise Figure
dB 1950 MHz
3.9 4.4
VD Device Operating Voltage
V
4.5 4.9
5.3
ID Device Operating Current
mA
72 80 88
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
ID = 80 mA Typ.
TL = 25ºC
°C/W
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no
responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-
support devices and/or system.Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-103325 Rev. A

1 page




SBW-5089 pdf
PreliminaryPDraetliamSinhaereyt
SBW-5089 Wideband DC-8 GHz MMIC Amplifier
Basic Application Circuit (no tuning elements)
VS RBIAS
1 uF 1000
pF
CD
LC
RF in
4
1
SWA-5089
3
CB 2
RF out
CB
VS 1 uF
RBIAS
BW5 LC
1000 pF
CD
CB CB
Application Circuit Element Values
Reference
Designator
500
Frequency (Mhz)
850
1950
2400
3500
CB 220 pF 100 pF 68 pF 56 pF 39 pF
CD 100 pF 68 pF 22 pF 22 pF 15 pF
LC 68 nH 33 nH 22 nH 18 nH 15 nH
Recommended Bias Resistor Values for ID=80mA
RBIAS=( VS-VD ) / ID
Supply Voltage(VS) 7.5 V 8 V 10 V 12 V
RBIAS
33 39 68 91
Note: RBIAS provides DC bias stability over temperature.
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an “BW5” designator on
the top surface of the package.
4
BW5
123
Pin # Function
Description
1 RF IN RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
2, 4 GND Connection to ground. Use via holes
for best performance to reduce lead
inductance as close to ground leads as
possible.
3 RF OUT/ RF output and bias pin. DC voltage is
BIAS present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Part Number Ordering Information
Part Number
Reel Size
Devices/Reel
SBW-5089
7"
1000
303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-103325 Rev. A

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