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PDF SM2G50US60 Data sheet ( Hoja de datos )
| Número de pieza | SM2G50US60 | |
| Descripción | IGBT MODULE | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SM2G50US60
Preliminary
IGBT MODULE
FEATURES
' High Speed Switching
' Low Conduction Loss
: VCE(sat) = 2.1 V (typ)
' Fast & Soft Anti-Parallel FWD
' Short circuit rated
&: Min 10uS at Tc=100
APPLICATIONS
Package code : 7-PM-AA
' General Purpose Inverters
' Welding Machine
' Induction Heating
' UPS , CVCF
' Robotics , Servo Controls
C2E1
E2
C1
Internal Circuit Diagram
ABSOLUTE MAXIMUM RATINGS (Tc = 25 )
G2
E2
E1
G1
Symbol Characteristics
Rating
VCES
VGES
IC
ICM (1)
IF
IFM
PC
Tj
Tstg
Viso
Collector-Emitter Voltage
Gate-Emitter Voltage
&Collector Current @ Tc = 25
Pulsed Collector Current
&Diode Continuous Forward Current @ Tc = 25
Diode Maximum Forward Current
&Maximum Power Dissipation @Tc = 25
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage @ AC 1 min
Mounting Torque @ Power terminals screw :M5
Mounting screw :M5
600
20
50
100
50
100
250
-40 ~ 150
-40 ~ 125
2500
2.0
2.0
Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature
Units
V
V
A
A
A
A
W
&
&
V
N.m
N.m
Rev.B
©1999 Fairchild Semiconductor Corporation
1 page  
SM2G50US60
16
Common Emitter
Tc = 25
12
16
Common Emitter
Tc = 125
12
Preliminary
IGBT MODULE
8
100
4 50
Ic = 20 A
0
0 4 8 12 16
GATE-EMITTER VOLTAGE V [V]
GE
20
8
100
4 50
Ic = 20 A
0
0 4 8 12 16
GATE-EMITTER VOLTAGE V [V]
GE
20
1
Tc = 25
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
single pulse
IGBT Stage
Tc = 25
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
DIODE Stage
1E-3
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
101
1E-3
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
101
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM2G50US60.PDF ] | |
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