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What is GF6968A?

This electronic component, produced by the manufacturer "General Semiconductor", performs the same function as "Common-Drain Dual N-Channel MOSFET".


GF6968A Datasheet PDF - General Semiconductor

Part Number GF6968A
Description Common-Drain Dual N-Channel MOSFET
Manufacturers General Semiconductor 
Logo General Semiconductor Logo 


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GF6968A
Common-Drain Dual N-Channel MOSFET
T FREENNCHET®
G TSSOP-8
Low VGS(th) VDS 20V RDS(ON) 22mID 6.2A
New Product
D S2 S2 G2
8 76 5
0.122 (3.10)
0.114 (2.90)
0.005 (0.127)
85
0.177 (4.50)
0.170 (4.30)
0.028 (0.70)
0.020 (0.50)
0.260 (6.60)
0.244 (6.20)
14
0.025 (0.65)
0.012 (0.30)
0.010 (0.25)
0°– 8°
0.006 (0.15)
0.002 (0.05)
0.047 (1.20)
0.041 (1.05)
Dimensions in inches
and (millimeters)
1 23 4
D S1 S1 G1
0.260 (6.60) min.
0.028 (0.70)
0.020 (0.50)
0.204 (5.20)
0.012 (0.30)
0.010 (0.25)
0.025 (0.65)
Mounting Pad Layout
Mechanical Data
Case: TSSOP-8 Package
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Li-ion battery packs use
• Designed for battery-switch applications
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)(1)
Pulsed Drain Current
Maximum Power Dissipation(1)
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient(1) Thermal Resistance
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
20
± 12
6.2
30
1.5
0.96
–55 to 150
83
Notes: (1) Surface mounted on FR4 board, t 10 sec.
Unit
V
A
A
W
°C
°C/W
4/11/01

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GF6968A equivalent
GF6968A
Common-Drain Dual N-Channel MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 Breakdown Voltage vs.
Junction Temperature
33
ID = 250µA
32
Fig. 11 Transient Thermal
Impedance
31
30
29
28
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 12 Power vs. Pulse Duration
25
20
15
10
5
0
0.01
0.1
1
10 100
Fig. 13 Maximum Safe Operating Area
100
10
RDS(ON) Limit
1
100µs
1ms
1001m0sms
1s
0.1 VGS = 10V
Single Pulse
on 1-in2 2oz Cu.
TA = 25°C
0.01
0.1
1
10s
DC
10
VDS -- Drain-Source Voltage (V)
100


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
GF6968AThe function is Common-Drain Dual N-Channel MOSFET. General SemiconductorGeneral Semiconductor

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