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PDF NJT4030P Data sheet ( Hoja de datos )
| Número de pieza | NJT4030P | |
| Descripción | Bipolar Power Transistors PNP Silicon | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NJT4030P
Preferred Device
Product Preview
Bipolar Power Transistors
PNP Silicon
Features
• Collector −Emitter Sustaining Voltage −
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain −
hFE = 200 (Min) @ IC = 1.0 Adc
= 100 (Min) @ IC = 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc
= 0.500 Vdc (Max) @ IC = 3.0 Adc
• SOT−223 Surface Mount Packaging
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
• These are Pb−Free Devices
http://onsemi.com
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 1
AYW
4030PG
1
A
Y
W
4030P
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. P2
1
Publication Order Number:
NJT4030P/D
1 page  
NJT4030P
TYPICAL CHARACTERISTICS
1.3
1.2 IC/IB = 10
1.1
1.0
0.9 −40°C
0.8
0.7
0.6 25°C
0.5
0.4 150°C
0.3
0.2
0.1
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
10
1.2
1.1 IC/IB = 50
1.0
0.9
0.8 −40°C
0.7
0.6 25°C
0.5
0.4
0.3 150°C
0.2
0.1
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
350
300
250
200
150
100
50
0
0
TJ = 25°C
ftest = 1 MHz
123 45
VEB, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
6
100
TJ = 25°C
80 ftest = 1 MHz
60
40
20
0
0 5 10 15 20 25 30 35
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
200
180 TJ = 25°C
160
ftest = 1 MHz
VCE = 10 V
140
120
100
80
60
40
20
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
1
10
1
0.1
0.01
1
10 ms
100 ms
0.5 ms
1 ms
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
100
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NJT4030P.PDF ] | |
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