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S30MS512P の電気的特性と機能

S30MS512PのメーカーはSPANSIONです、この部品の機能は「NAND Interface Memory Based」です。


製品の詳細 ( Datasheet PDF )

部品番号 S30MS512P
部品説明 NAND Interface Memory Based
メーカ SPANSION
ロゴ SPANSION ロゴ 




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S30MS512P Datasheet, S30MS512P PDF,ピン配置, 機能
www.DataSheet4U.com
S30MS-P ORNANDTMFlash Family
S30MS01GP, S30MS512P
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on
MirrorBitTechnology
Data Sheet (Preliminary)
S30MS-P ORNANDTMFlash Family Cover Sheet
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
Publication Number S30MS-P_00
Revision A Amendment 7
Issue Date August 4, 2006

1 Page





S30MS512P pdf, ピン配列
S30MS-P ORNANDTM Flash Family
S30MS01GP, S30MS512P
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on
MirrorBitTechnology
Data Sheet (Preliminary)
Distinctive Characteristics
„ Single Power Supply Operation
– 1.8 volt read, erase, and program operations
– VCC = 1.7 to 1.95V
„ Manufactured on 90 nm MirrorBitTM Process Technology
„ Bus widths - x8 and x16
„ Page Size
– Full Page Read
2K + 64 Byte
– Partial Page Read
512 + 16 Byte
„ Block (erase unit) Architecture
– Number of Blocks
1Gb: 1K blocks
512Mb: 512 blocks
– Block Size
128K + 4K Byte
„ Compatibility with NAND Flash I/O
– Provides pinout and command set compatibility with single-power
supply NAND flash
„ High-Performance Cache Register
– Cache Register matches page size to improve programming
throughput
„ 100,000 Program/Erase Cycles per Sector Typical
„ 10-Year Data Retention Typical
„ Operating Temperature Ranges
– Wireless (-25°C to +85°C)
„ Package options
– 48-pin TSOP
– 137-ball FBGA MCP Compatible
„ 100% Valid Blocks
Performance Characteristics
Read Access Times (Maximum)
Full Page Random Access
Partial Page Random Access
Serial Read
25 µs
8 µs
25ns
Legend:
b = bit, B = Byte, K = 1024, M = 1048576
Read Current
Erase Current
Program Current
Standby Current
Current Consumption (typical)
40 mA
60 mA
60 mA
10 uA
Read, Program and Erase Performance (typical)
x8 x16
Program
2.3 MB/s
2.4 MB/s
Erase
2.7 MB/s
2.7 MB/s
Full Page Read
26.7 MB/s
40.1 MB/s
Partial Page Read
24.3 MB/s
34.9 MB/s
Publication Number S30MS-P_00
Revision A Amendment 7
Issue Date August 4, 2006
This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document
may be revised by subsequent versions or modifications due to changes in technical specifications.


3Pages


S30MS512P 電子部品, 半導体
Data Sheet (Preliminary)
1. General Description
The S30MS-P is a 1.8V single voltage flash memory product manufactured using 90 nm MirrorBit™
technology. The S30MS01GP is a 1Gb device, organized as 64M Words or 128MB. The S30MS512P is a
512Mb device, organized as 32M Words or 64MB.
The S30MS-P family of devices offer advantages such as:
„ Fast write and sustained write speed suitable for data storage applications
„ Fast read speed and reliability suitable for demanding code storage applications
„ Proven MirrorBittechnology
The devices are offered in a 48-pin TSOP, or FBGA MCP-compatible packages. Each device has separate
chip enable (CE#) controls for the FBGA package.
The S30MS-P is a byte/word serial-type memory device that utilizes the I/O pins for both address and data
input/output, as well as for command input. The Erase and Program operations are automatically executed
making the device most suitable for applications such as solid-state disks, pictures storage for still cameras,
cellular phones, and other systems that require high-density non-volatile data storage.
Typical application requirements are shown in the table below with reference to the ORNAND capabilities.
Application
2G Network
3G Network
3.5G Network (HSPDA)
Full Speed USB
MP3 Playback
MPEG2 (H.262)
MPEG4 (H.264)
WiMax
Minimum Requirements
14.4 Kbps (1.8 KB/sec)
2 Mbps (250 KB/sec)
2.5 MB/sec
1.5 MB/sec
320 Kbps (40 KB/sec)
3 MB/sec
1 MB/sec
0.25 MB/sec
Spansion ORNAND
9
9
9
9
9
9
9
9
The devices include the following features:
„ Automatic page 0 read, allows access of the data in page 0 without command and address input of read
command after power-up
„ Chip Enable Don't Care support for direct connection with microcontrollers
„ Compatible with NAND Flash command set. Commands are written to the device using standard
microprocessor write timing. Write cycles provide commands, addresses and data
„ Initiation of program and erase functions through command sequences. Once a program or erase
operation begins, the host system should only poll for status or monitor the Ready/Busy# (RY/BY#) output
to determine whether the operation is complete
„ Manufactured using MirrorBit™ flash technology resulting in the highest levels of quality, reliability, and cost
effectiveness
4
S30MS-P ORNANDTM Flash Family
S30MS-P_00_A7 August 4, 2006

6 Page



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部品番号部品説明メーカ
S30MS512P

NAND Interface Memory Based

SPANSION
SPANSION


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