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GA150TS60U の電気的特性と機能

GA150TS60UのメーカーはInternational Rectifierです、この部品の機能は「HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 GA150TS60U
部品説明 HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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GA150TS60U Datasheet, GA150TS60U PDF,ピン配置, 機能
www.DataSheet4U.com
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50056D
GA150TS60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.7V
@VGE = 15V, IC = 150A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
150
300
300
300
±20
2500
440
230
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
www.irf.com
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 T
Weight of Module
Typ.
0.1
200
Max.
0.28
0.35
6.0
5.0
Units
°C/W
N.m
g
1
05/20/02

1 Page





GA150TS60U pdf, ピン配列
GA150TS60U
120
100
80
S q u a re w a v e:
60% of rated
60 v o lta g e
I
40
Ideal diodes
20
0
0.1
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 92 W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 25 oC
TJ = 125 oC
100
VGE = 15V
20µs PULSE WIDTH
10
123
VCE, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
1000
100
10
TJ = 125 oC
TJ = 25 oC
VVCCCE == 252550VVV
58µ0sµPs UPLUSLSEEWWIDIDTTHH
1
56789
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3


3Pages


GA150TS60U 電子部品, 半導体
GA150TS60U
50 RG1=2=7Oh;mRG2 = 0
T J = 150° C
VCC = 360V
40 VGE = 15V
30
20
10
0
0 50 100 150 200 250
I C, Collector-to-emitter Current (A)
300
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
100
TJ = 125°C
TJ = 25°C
10
1.0 2.0 3.0 4.0 5.0
Forward Voltage Drop - V FM (V)
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
400
VGE = 20V
T J = 125°C
350 V CE measured at terminal (Peak Voltage)
300
250
200 SAFE O PER ATIN G AR EA
150
100
50
0A
0 100 200 300 400 500 600 700
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Reverse Bias SOA
16000
12000
IF = 300A
IF = 150A
IF = 75A
8000
4000
VR = 3 6 0V
TJ = 125°C
TJ = 25°C
0
500
1000
1500
2000
di f /dt - (A/µs)
Fig. 14 - Typical Stored Charge vs. dif/dt
www.irf.com

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部品番号部品説明メーカ
GA150TS60U

HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT

International Rectifier
International Rectifier


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