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GA150TD120K データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 GA150TD120K
部品説明 Short Circuit Rated Ultra-Fast tm Speed IGBT
メーカ XIAN
ロゴ XIAN ロゴ 
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GA150TD120K Datasheet, GA150TD120K PDF,ピン配置, 機能
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PRELIMINARY GA150TD120K
]HALF-BRODGE” IGBT DOUBLE INT-A -PAK
Short Circuit Rated
Ultra-FastTM Speed IGBT
Features
Generation 5 IGBT NPT technology
UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode.
Very low conduction and switching losses
HEXFRED TM antiparallel diodes with ultra-soft
recovery
Industry standard package
UL recongnition pending
Short circuit rated 10 µs
Benefits
VCES=1200V
VCE(on) typ.=2.5V
@VGE=15V,IC=150A
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25oC
IC @ Tc=85oC
ICM
ILM
IFM
VGE
VISOL
PD @ TC =25oC
PD @ TC=85oC
TJ  
TSTG
Collector- to- Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed collector Current
Peak switching Current
Peak Diode Forward Current
Gate- to- Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t =1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
210
150
300
300
300
±20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
Co
Termal / Mechanical Characteristics
Parameter
RθJC Termal Resistance, Junction-to- Case- IBGT
RθJC Termal Resistance, Junction-to- Case- Diode
RθCS Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
1
Typ.
-
-
0.1
-
-
400
Max.
0.10
0.15
-
4.0
3.0
-
Units
oC/W
N.m
g

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