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STP11NM60FDFP の電気的特性と機能

STP11NM60FDFPのメーカーはST Microelectronicsです、この部品の機能は「N-CHANNEL Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP11NM60FDFP
部品説明 N-CHANNEL Power MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP11NM60FDFP Datasheet, STP11NM60FDFP PDF,ピン配置, 機能
www.DataSheet4U.com
STP11NM60FD- STB11NM60FD
STP11NM60FDFP - STB11NM60FD-1
N-CHANNEL 600V-0.40-11ATO-220/TO-220FP/I2PAK/D2PAK
FDmesh™Power MOSFET (with FAST DIODE)
TYPE
VDSS
RDS(on)
ID
STP11NM60FD
STP11NM60FDFP
STB11NM60FD
STB11NM60FD-1
600 V
600 V
600 V
600 V
< 0.45
< 0.45
< 0.45
< 0.45
11 A
11 A
11 A
11 A
TYPICAL RDS(on) = 0.40
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDER CODES
PART NUMBER
STP11NM60FD
STP11NM60FDFP
STB11NM60FDT4
STB11NM60FD-1
MARKING
P11NM60FD
P11NM60FDFP
B11NM60FD
B11NM60FD
February 2004
PACKAGE
TO-220
TO-220FP
D2PAK
I2PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
1/13

1 Page





STP11NM60FDFP pdf, ピン配列
STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 5.5A
5.2 S
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1000
pF
Coss
Output Capacitance
208 pF
Crss Reverse Transfer
Capacitance
28 pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
100 pF
RG Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 250V, ID = 5.5A
RG = 4.7VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 11A,
VGS = 10V
Test Conditions
VDD = 400V, ID = 11A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 11A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 11A, di/dt = 100A/µs,
VDD = 50V
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
20
16
28
7.8
13
Max.
40
Unit
ns
ns
nC
nC
nC
Min.
Typ.
10
15
24
Max.
Unit
ns
ns
ns
Min.
Typ.
190
1.1
14.5
Max.
11
44
1.5
Unit
A
A
V
ns
µC
A
3/13


3Pages


STP11NM60FDFP 電子部品, 半導体
STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1
Source-drain Diode Forward Characteristics
6/13

6 Page



ページ 合計 : 13 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
STP11NM60FDFP

N-CHANNEL Power MOSFET

ST Microelectronics
ST Microelectronics


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