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FGA15N120ANDのメーカーはFairchild Semiconductorです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | FGA15N120AND |
| |
部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
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FGA15N120AND
IGBT
General Description
Employing NPT technology, Fairchild’s AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.4 V @ IC = 15A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 210ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
C
GC E
TO-3P
G
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FGA15N120AND
1200
± 20
24
15
45
15
45
200
80
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.63
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
1 Page 120
T = 25℃
C
100
80
20V
17V
15V
12V
60
V = 10V
GE
40
20
0
02468
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
10
4.0
Common Emitter
V = 15V
GE
3.5
24A
3.0
I = 15A
C
2.5
2.0
25
50 75 100
Case Temperature, TC [℃]
125
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
T = 25℃
C
16
12
8
4 24A
15A
I = 7.5A
C
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2003 Fairchild Semiconductor Corporation
20
80
Common Emitter
V = 15V
GE
T = 25℃
C
60
T = 125℃
C
40
20
0
0246
Collector-Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
30
Vcc = 600V
load Current : peak of square wave
20
10
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 40W
0
0.1 1
10
Frequency [kHz]
100
Fig 4. Load Current vs. Frequency
1000
20
Common Emitter
T = 125℃
C
16
12
8
24A
4
15A
I = 7.5A
C
0
0 4 8 12 16
Gate-Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
20
FGA15N120AND Rev. A
3Pages 50
10
T = 125oC
J
1
T = 25oC
J
0.1
0.0
TC = 125℃
T = 25℃
C
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage , VF [V]
Fig 18. Forward Characteristics
7000
6000
5000
di/dt = 200A/µs
4000
3000
di/dt = 100A/µs
2000
1000
0
5 10 15 20
Forward Current , IF [A]
Fig 20. Stored Charge
25
30
di/dt = 200A/µs
25
20
15
di/dt = 100A/µs
10
5
0
5 10 15 20
Forward Current , IF [A]
Fig 19. Reverse Recovery Current
25
400
300 di/dt = 100A/µs
200
di/dt = 200A/µs
100
0
5 10 15 20
Forward Current , IF [A]
Fig 21. Reverse Recovery Time
25
©2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
6 Page | |||
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