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Número de pieza | PBLS4002Y | |
Descripción | 40 V PNP BISS loadswitch | |
Fabricantes | NXP Semiconductors | |
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PBLS4002Y; PBLS4002V
40 V PNP BISS loadswitch
Rev. 01 — 6 December 2004
Product data sheet
1. Product profile
1.1 General description
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package.
Table 1: Product overview
Type number
PBLS4002Y
PBLS4002V
Package
Philips
SOT363
SOT666
JEITA
SC-88
-
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low ‘threshold’ voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count.
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment.
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
TR1; PNP: low VCEsat transistor
VCEO
collector-emitter voltage open base
IC
RCEsat
collector-current (DC)
equivalent on-resistance
IC = −500 mA;
IB = −50 mA
TR2; NPN: resistor-equipped transistor
VCEO
collector-emitter voltage open base
Min Typ Max Unit
- - −40 V
- - −500 mA
- 440 700 mΩ
- - 50 V
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Philips Semiconductors
PBLS4002Y; PBLS4002V
40 V PNP BISS loadswitch
800
hFE
600
400
(1)
(2)
006aaa050
−103
VCEsat
(mV)
−102
006aaa051
(1)
(3)
200
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 1. TR1 (PNP): DC current gain as a function of
collector current; typical values.
−1200
VBE
(mV)
−800
−400
006aaa052
(1)
(2)
(3)
−10
−10−1
(2)
(3)
−1 −10
−102
−103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 2. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical
values.
−1200
VBEsat
(mV)
−1000
006aaa053
− 800
− 600
(1)
(2)
− 400
(3)
0
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig 3. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values.
− 200
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig 4. TR1 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values.
9397 750 13455
Product data sheet
DataSheet4 U .com
Rev. 01 — 6 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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Philips Semiconductors
PBLS4002Y; PBLS4002V
40 V PNP BISS loadswitch
9. Packing information
Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
PBLS4002Y
PBLS4002V
SOT363
SOT666
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping.
[3] T2: reverse taping.
Packing quantity
3 000
4 000
[2] -115
-
[3] -125
-
- -115
10 000
-135
-165
-
9397 750 13455
Product data sheet
DataSheet4 U .com
Rev. 01 — 6 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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PDF Descargar | [ Datasheet PBLS4002Y.PDF ] |
Número de pieza | Descripción | Fabricantes |
PBLS4002V | 40 V PNP BISS loadswitch | NXP Semiconductors |
PBLS4002Y | 40 V PNP BISS loadswitch | NXP Semiconductors |
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